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| Manufacturer | Diodes Incorporated |
|---|---|
| Manufacturer's Part Number | CTA2N1P-7-F |
| Description | NPN; Configuration: SINGLE WITH BUILT-IN FET; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): .6 A; |
| Datasheet | CTA2N1P-7-F Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 250 MHz |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | .6 A |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE WITH BUILT-IN FET |
| Transistor Element Material: | SILICON |
| Maximum Rise Time (tr): | 20 ns |
| Maximum Turn On Time (ton): | 35 ns |
| Sub-Category: | Other Transistors |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| No. of Terminals: | 6 |
| Maximum Power Dissipation (Abs): | 150 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| Maximum Turn Off Time (toff): | 255 ns |
| JESD-30 Code: | R-PDSO-G6 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Fall Time (tf): | 30 ns |
| Moisture Sensitivity Level (MSL): | 1 |
| Polarity or Channel Type: | NPN |
| Minimum DC Current Gain (hFE): | 40 |
| JESD-609 Code: | e3 |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 40 V |
| Peak Reflow Temperature (C): | 260 |
| Maximum VCEsat: | .75 V |
