Diodes Incorporated - DDTA114YCA

  1. Home
  2. Diodes Incorporated - DDTA114YCA
DDTA114YCA by Diodes Incorporated

Image shown is a representation only.

Manufacturer Diodes Incorporated
Manufacturer's Part Number DDTA114YCA
Description Other Transistors; Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 150 Cel;
Datasheet DDTA114YCA Datasheet
NAME DESCRIPTION
Maximum Operating Temperature: 150 Cel
Minimum Operating Temperature: -55 Cel
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

TIP125 by Harris Semiconductor

TIP125

Harris Semiconductor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;
TIP111 by Harris Semiconductor

TIP111

Harris Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; JESD-609 Code: e0;
TIP117 by North American Philips Discrete Products Div

TIP117

North American Philips Discrete Products Div

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Terminal Finish: Tin/Lead (Sn/Pb);
BC847 by Sinyork

BC847

Sinyork

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .1 A;
BD140 by National Semiconductor

BD140

National Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
BC817-40 by Allegro MicroSystems

BC817-40

Allegro MicroSystems

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A; JESD-609 Code: e0;
TIP110 by Iskra Semic Capacitors Industry

TIP110

Iskra Semic Capacitors Industry

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Minimum DC Current Gain (hFE): 500;
BD138 by Tt Electronics Plc

BD138

Tt Electronics Plc

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
TIP127 by Silicon Group

TIP127

Silicon Group

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;
BC817-25 by Unisonic Technologies

BC817-25

Unisonic Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): 1.5 A; No. of Elements: 1;
BSS84 by North American Philips Discrete Products Div

BSS84

North American Philips Discrete Products Div

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; JESD-609 Code: e0; Maximum Drain Current (Abs) (ID): .13 A;
3001 by Asi Semiconductor

3001

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .25 A; Maximum Operating Temperature: 175 Cel;
MMBTA92 by Samsung

MMBTA92

Samsung

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .5 A;
2N3055- by General Electric Solid State

2N3055-

General Electric Solid State

2N3055- by General Electric Solid State is an NPN transistor with a max power dissipation of 115W and max collector current of 15A. With a min hFE of 20, it operates up to 200°C, making it ideal for high-power applications like amplifiers and power supplies.
2N3055 by Mospec Semiconductor

2N3055

Mospec Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
BC546B by Tt Electronics Plc

BC546B

Tt Electronics Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
TIP110 by National Semiconductor

TIP110

National Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; JESD-609 Code: e0;
TIP125 by Inchange Semiconductor

TIP125

Inchange Semiconductor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;
BD139 by Philips Semiconductors

BD139

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
TIP111 by Iskra Semic Capacitors Industry

TIP111

Iskra Semic Capacitors Industry

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Terminal Finish: Tin/Lead (Sn/Pb);