DDTC115EUA-7-F by Diodes Incorporated | Transistors

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Manufacturer	Diodes Incorporated
Manufacturer's Part Number	DDTC115EUA-7-F
Description	NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .02 A;
Datasheet	DDTC115EUA-7-F Datasheet

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	250 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.02 A
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN RESISTOR
Transistor Element Material:	SILICON
Sub-Category:	BIP General Purpose Small Signal
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.2 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Moisture Sensitivity Level (MSL):	1
Other Names:	31-DDTC115EUA-7-FTR DDTC115EUA-FDITR DDTC115EUA-FDICT-ND DDTC115EUA-7-FDICT DDTC115EUA-FDIDKR-ND -DDTC115EUA-7-FDICT 31-DDTC115EUA-7-FCT DDTC115EUA-FDIDKR DDTC115EUA-FDITR-ND DDTC115EUA-7-FDIDKR -DDTC115EUA-7-FDIDKR DDTC115EUA-FDICT 31-DDTC115EUA-7-FDKR DDTC115EUA7F DDTC115EUA-7-FDITR -DDTC115EUA-7-FDITR
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	82
JESD-609 Code:	e3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	50 V
Additional Features:	BUILT-IN BIAS RESISTOR RATIO 1
Peak Reflow Temperature (C):	260

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