Diodes Incorporated - DDTC115EUAQ-7-F

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DDTC115EUAQ-7-F by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number DDTC115EUAQ-7-F
Description NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .02 A; Transistor Element Material: SILICON;
Datasheet DDTC115EUAQ-7-F Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 250 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .02 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 82
Terminal Finish: MATTE TIN
JESD-609 Code: e3
No. of Terminals: 3
Maximum Collector-Emitter Voltage: 50 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Additional Features: BUILT IN BIAS RESISTANCE RATIO IS 1, HIGH RELIABILITY
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 1
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