Diodes Incorporated - DDTC144EKA

  1. Home
  2. Diodes Incorporated - DDTC144EKA
DDTC144EKA by Diodes Incorporated

Image shown is a representation only.

Manufacturer Diodes Incorporated
Manufacturer's Part Number DDTC144EKA
Description Other Transistors;
Datasheet DDTC144EKA Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BD243C by Inchange Semiconductor

BD243C

Inchange Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 8 A; Minimum DC Current Gain (hFE): 30;
TIP125 by Silicon Group

TIP125

Silicon Group

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;
TIP117 by Semitronics

TIP117

Semitronics

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Maximum Operating Temperature: 150 Cel;
BC846B by Shanghai Lunsure Electronic Technology

BC846B

Shanghai Lunsure Electronic Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
SI4532DY by Siliconix

SI4532DY

Siliconix

N-CHANNEL AND P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; JESD-609 Code: e0; Maximum Drain Current (Abs) (ID): 3.9 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
MJE3055T by National Semiconductor

MJE3055T

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 10 A;
BC847C by Vishay Intertechnology

BC847C

Vishay Intertechnology

Vishay Intertechnology's BC847C is an NPN transistor with a single configuration, suitable for surface mount applications. It offers a max power dissipation of 0.3W, min DC current gain of 420, and can operate at temperatures up to 150°C. Ideal for low-power electronic circuits requiring high current gain and moderate frequency operation up to 100MHz.
MJE340 by National Semiconductor

MJE340

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): .5 A; Minimum DC Current Gain (hFE): 30;
BC337-16 by Tt Electronics Plc

BC337-16

Tt Electronics Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 100;
BSR14 by Philips Semiconductors

BSR14

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .8 A;
2N3055 by Plessey Semiconductors Discrete Components Div

2N3055

Plessey Semiconductors Discrete Components Div

2N3055 by Plessey Semiconductors is an NPN transistor with a max power dissipation of 115W and a min DC current gain of 20. It can handle a max collector current of 15A and has a nominal transition frequency of 2.5MHz. This transistor is commonly used in various applications requiring high power amplification or switching capabilities.
2N2905A by Bharat Electronics

2N2905A

Bharat Electronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
BC807-40 by Jiangsu Changjiang Electronics Technology

BC807-40

Jiangsu Changjiang Electronics Technology

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
TIP29C by Boca Semiconductor

TIP29C

Boca Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1 A;
BC337-40 by Philips Semiconductors

BC337-40

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A; No. of Elements: 1;
MJE350 by Inchange Semiconductor

MJE350

Inchange Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): .5 A; No. of Elements: 1;
MMBT3906 by Philips Semiconductors

MMBT3906

Philips Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
2N4401 by Philips Semiconductors

2N4401

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .6 A;
TIP111 by Jiangsu Changjiang Electronics Technology

TIP111

Jiangsu Changjiang Electronics Technology

TIP111 by Jiangsu Changjiang Electronics Technology is an NPN Darlington transistor with a max power dissipation of 50W, min DC current gain of 500, and max collector current of 4A. It is commonly used in various applications requiring high power amplification and switching capabilities.
BC557B by Philips Semiconductors

BC557B

Philips Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A; JESD-609 Code: e3;