Diodes Incorporated - DMC2990UDJ

  1. Home
  2. Diodes Incorporated - DMC2990UDJ
DMC2990UDJ by Diodes Incorporated

Image shown is a representation only.

Manufacturer Diodes Incorporated
Manufacturer's Part Number DMC2990UDJ
Description N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Terminal Form: FLAT; Transistor Element Material: SILICON;
Datasheet DMC2990UDJ Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .33 A
Polarity or Channel Type: N-CHANNEL AND P-CHANNEL
Surface Mount: YES
Terminal Finish: MATTE TIN
JESD-609 Code: e3
No. of Terminals: 6
Minimum DS Breakdown Voltage: 20 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Additional Features: HIGH RELIABILITY, LOW THRESHOLD
Maximum Drain-Source On Resistance: .99 ohm
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BSS123 by Siemens

BSS123

Siemens

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; JESD-30 Code: R-PDSO-G3; Transistor Element Material: SILICON;
IRFD110PBF by Vishay Siliconix

IRFD110PBF

Vishay Siliconix

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Package Style (Meter): IN-LINE; Transistor Element Material: SILICON;
BSS84-TP by Micro Commercial Components

BSS84-TP

Micro Commercial Components

Small Signal Field-Effect Transistors; JESD-609 Code: e3; Maximum Drain Current (ID): .13 A; Moisture Sensitivity Level (MSL): 1; Terminal Finish: MATTE TIN; Peak Reflow Temperature (C): 260;
2N7002,215 by NXP Semiconductors

2N7002,215

NXP Semiconductors

2N7002,215 by NXP Semiconductors is a small signal N-CHANNEL FET with a min DS breakdown voltage of 60V and max drain current of 0.3A. It is used for switching applications in enhancement mode, operates b/w -65 to 150 °C, and has a max power dissipation of 0.2W.
NTGS5120PT1G by Onsemi

NTGS5120PT1G

Onsemi

NTGS5120PT1G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a single configuration with built-in diode, GULL WING terminals, and operates in ENHANCEMENT MODE. With a max ID of 2.5A and 0.111 ohm RDS(on), it offers high performance in a small outline package style.
2N7000 by Weitron Technology

2N7000

Weitron Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; Terminal Form: THROUGH-HOLE; Maximum Drain Current (ID): .2 A;
BSS138_NL by Fairchild Semiconductor

BSS138_NL

Fairchild Semiconductor

BSS138_NL by Fairchild Semiconductor is a N-CHANNEL FET with 50V DS breakdown voltage, 0.2A ID, and 6 ohm RDS. It is used for switching applications in enhancement mode with a max operating temperature of 150°C.
BSS138W-7-F by Multicomp Pro

BSS138W-7-F

Multicomp Pro

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Transistor Element Material: SILICON; No. of Elements: 1;
BSS123 by Fairchild Semiconductor

BSS123

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Feedback Capacitance (Crss): 6 pF; Minimum DS Breakdown Voltage: 100 V;
BSS138PS,115 by Nexperia

BSS138PS,115

Nexperia

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 2; No. of Terminals: 6; Minimum DS Breakdown Voltage: 60 V;
FDN340P by Onsemi

FDN340P

Onsemi

FDN340P by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 2A, operating in ENHANCEMENT MODE at temperatures ranging from -55 to 150 °C. The package is a SMALL OUTLINE with GULL WING terminals and METAL-OXIDE SEMICONDUCTOR technology.
BC548B by Allegro MicroSystems

BC548B

Allegro MicroSystems

NPN; Configuration: SINGLE; Surface Mount: NO; No. of Elements: 1; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e0;
BSS138W by Micro Commercial Components

BSS138W

Micro Commercial Components

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .34 W; Terminal Form: GULL WING; Additional Features: ULTRA-LOW RESISTANCE;
SI2347DS-T1-GE3 by Vishay Intertechnology

SI2347DS-T1-GE3

Vishay Intertechnology

SI2347DS-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 5A, 0.042 ohm Drain-Source On Resistance, and operates in ENHANCEMENT MODE. With a small outline package style and peak reflow temperature of 260°C, it is suitable for various electronic devices requiring high power dissipation.
IRLML2803GTRPBF by Infineon Technologies

IRLML2803GTRPBF

Infineon Technologies

Infineon's IRLML2803GTRPBF is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 1.2A Drain Current, 0.25 ohm On Resistance, and 150°C Operating Temperature. Its GULL WING terminals and ENHANCEMENT MODE make it suitable for compact electronic devices requiring efficient power management.
IRF7820TRPBF by International Rectifier

IRF7820TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G8;
BSS138BK,215 by Nexperia

BSS138BK,215

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Additional Features: LOGIC LEVEL COMPATIBLE; Maximum Operating Temperature: 150 Cel;
BSS138BK by Nexperia

BSS138BK

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Terminal Form: GULL WING; Reference Standard: AEC-Q101; IEC-60134;
DMC2400UV-7 by Diodes Incorporated

DMC2400UV-7

Diodes Incorporated

DMC2400UV-7 by Diodes Inc. is a Small Signal FET with N/P-channel types, ideal for switching applications. It features 2 elements with built-in diode in a small outline package, operating in enhancement mode. With a max drain current of 1.03A and low on-resistance of 0.7 ohm, it offers efficient performance at temperatures ranging from -55 to 150°C.
2N7000-D74Z by Onsemi

2N7000-D74Z

Onsemi

2N7000-D74Z by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage and 0.2A max drain current. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.4W. The transistor features a built-in diode, cylindrical package style, and metal-oxide semiconductor technology.