Diodes Incorporated - DMC2991UDR4-7

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DMC2991UDR4-7 by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number DMC2991UDR4-7
Description Small Signal Field-Effect Transistors;
Datasheet DMC2991UDR4-7 Datasheet
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BC548B by Sprague Electric

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ZXMP10A13FTA by Diodes Incorporated

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NX3008PBK,215 by NXP Semiconductors

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FDC604P by Fairchild Semiconductor

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NDS331N_NL by Fairchild Semiconductor

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NDS331N_NL by Fairchild Semiconductor is a N-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 1.3A Drain Current, 0.16 ohm On Resistance, and operates in ENHANCEMENT MODE. This SMALL OUTLINE transistor has a max power dissipation of 0.5W and can withstand temperatures up to 150°C.
BSS84PWL6327XT by Infineon Technologies

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IRLML2502GTRPBF by Infineon Technologies

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BSS138K-13 by Diodes Incorporated

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BSS138K-13 by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, operating in enhancement mode. With 3 terminals and 0.31A max drain current, it offers high performance in small outline package style.
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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; JESD-30 Code: R-PDSO-G3; Maximum Feedback Capacitance (Crss): 5 pF;
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P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Operating Mode: DEPLETION MODE; No. of Elements: 1; Field Effect Transistor Technology: JUNCTION;
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