Diodes Incorporated - DMG6402LVT-13

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DMG6402LVT-13 by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number DMG6402LVT-13
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.75 W; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e3;
Datasheet DMG6402LVT-13 Datasheet
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 6 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: MATTE TIN
JESD-609 Code: e3
Maximum Power Dissipation (Abs): 1.75 W
Package Style (Meter): SMALL OUTLINE
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 6 A
Peak Reflow Temperature (C): 260
Maximum Drain-Source On Resistance: .03 ohm
Moisture Sensitivity Level (MSL): 1
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