Diodes Incorporated - DMN1023UCB4-7

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DMN1023UCB4-7 by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number DMN1023UCB4-7
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.2 W; JESD-30 Code: S-PBGA-B4; Minimum DS Breakdown Voltage: 12 V;
Datasheet DMN1023UCB4-7 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 5.1 A
Surface Mount: YES
Terminal Finish: TIN SILVER COPPER
No. of Terminals: 4
Maximum Power Dissipation (Abs): 1.2 W
Terminal Position: BOTTOM
Package Style (Meter): GRID ARRAY
JESD-30 Code: S-PBGA-B4
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: BALL
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .042 ohm
Moisture Sensitivity Level (MSL): 1
Maximum Feedback Capacitance (Crss): 30 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e1
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 12 V
Peak Reflow Temperature (C): 260
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