Diodes Incorporated - DMN2008LFU-7

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DMN2008LFU-7 by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number DMN2008LFU-7
Description N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Terminal Finish: NICKEL PALLADIUM GOLD; JESD-30 Code: R-PDSO-N6;
Datasheet DMN2008LFU-7 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 14.5 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: NICKEL PALLADIUM GOLD
JESD-609 Code: e4
No. of Terminals: 6
Minimum DS Breakdown Voltage: 20 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-N6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Peak Reflow Temperature (C): 260
Maximum Drain-Source On Resistance: .0096 ohm
Moisture Sensitivity Level (MSL): 1
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