DMN2012UCA6-7 by Diodes Incorporated | Transistors

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Manufacturer	Diodes Incorporated
Manufacturer's Part Number	DMN2012UCA6-7
Description	N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.3 W; Package Body Material: UNSPECIFIED; Terminal Finish: NICKEL PALLADIUM GOLD;
Datasheet	DMN2012UCA6-7 Datasheet

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Configuration:	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Feedback Capacitance (Crss):	102 pF
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Terminal Finish:	NICKEL PALLADIUM GOLD
JESD-609 Code:	e4
Minimum Operating Temperature:	-55 Cel
No. of Terminals:	6
Minimum DS Breakdown Voltage:	24 V
Maximum Power Dissipation (Abs):	2.3 W
Terminal Position:	BOTTOM
Package Style (Meter):	CHIP CARRIER
JESD-30 Code:	R-XBCC-N6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel

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