Diodes Incorporated - DMN2990UFZ-7B

DMN2990UFZ-7B by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number DMN2990UFZ-7B
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; Operating Mode: ENHANCEMENT MODE; Maximum Drain-Source On Resistance: .99 ohm;
Datasheet DMN2990UFZ-7B Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .25 A
Surface Mount: YES
Terminal Finish: NICKEL PALLADIUM GOLD
No. of Terminals: 3
Terminal Position: BOTTOM
Package Style (Meter): CHIP CARRIER
JESD-30 Code: S-PBCC-N3
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .99 ohm
Moisture Sensitivity Level (MSL): 1
Other Names: -772-DMN2990UFZ-7BDKR
DMN2990UFZ-7BDIDKR
DMN2990UFZ-7BDICT
-772-DMN2990UFZ-7BTR
-772-DMN2990UFZ-7BCT
DMN2990UFZ-7BDITR
Maximum Feedback Capacitance (Crss): 5.6 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e4
Minimum DS Breakdown Voltage: 20 V
Additional Features: HIGH RELIABILITY
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): 260
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