Diodes Incorporated - DMN3016LDN-13

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DMN3016LDN-13 by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number DMN3016LDN-13
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Terminal Form: NO LEAD; Maximum Pulsed Drain Current (IDM): 45 A;
Datasheet DMN3016LDN-13 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 7.3 A
Maximum Pulsed Drain Current (IDM): 45 A
Surface Mount: YES
No. of Terminals: 8
Maximum Power Dissipation (Abs): 1.6 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N8
No. of Elements: 2
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .02 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 24 mJ
Maximum Feedback Capacitance (Crss): 82 pF
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 30 V
Peak Reflow Temperature (C): 260
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