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| Manufacturer | Diodes Incorporated |
|---|---|
| Manufacturer's Part Number | DMN3016LFDF-7 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .012 ohm; Additional Features: HIGH RELIABILITY; Terminal Position: DUAL; |
| Datasheet | DMN3016LFDF-7 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 10 A |
| Surface Mount: | YES |
| Terminal Finish: | NICKEL PALLADIUM GOLD |
| No. of Terminals: | 6 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | S-PDSO-N6 |
| No. of Elements: | 1 |
| Package Shape: | SQUARE |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .012 ohm |
| Other Names: |
DMN3016LFDF-7DITR DMN3016LFDF-7DICT DMN3016LFDF-7-ND DMN3016LFDF-7DIDKR |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e4 |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 30 V |
| Additional Features: | HIGH RELIABILITY |
| Reference Standard: | AEC-Q101 |
| Peak Reflow Temperature (C): | 260 |









