DMN3032LFDB-7 by Diodes Incorporated | Transistors

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Manufacturer	Diodes Incorporated
Manufacturer's Part Number	DMN3032LFDB-7
Description	N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.7 W; No. of Terminals: 6; Maximum Feedback Capacitance (Crss): 44 pF;
Datasheet	DMN3032LFDB-7 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	6.2 A
Maximum Pulsed Drain Current (IDM):	25 A
Surface Mount:	YES
Terminal Finish:	NICKEL PALLADIUM GOLD
No. of Terminals:	6
Maximum Power Dissipation (Abs):	1.7 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	S-PDSO-N6
No. of Elements:	2
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.03 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	10 mJ
Maximum Feedback Capacitance (Crss):	44 pF
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e4
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	30 V
Additional Features:	HIGH RELIABILITY
Reference Standard:	AEC-Q101
Peak Reflow Temperature (C):	260

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