Diodes Incorporated - DMN3071LFR4-7R

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DMN3071LFR4-7R by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number DMN3071LFR4-7R
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.1 W; JESD-609 Code: e4; Package Body Material: PLASTIC/EPOXY;
Datasheet DMN3071LFR4-7R Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 3.4 A
Surface Mount: YES
Terminal Finish: NICKEL PALLADIUM GOLD
No. of Terminals: 3
Maximum Power Dissipation (Abs): 1.1 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N3
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .075 ohm
Moisture Sensitivity Level (MSL): 1
Maximum Feedback Capacitance (Crss): 26 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e4
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 30 V
Peak Reflow Temperature (C): 260
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