Diodes Incorporated - DMN31D5UDJ-7-55

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DMN31D5UDJ-7-55 by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number DMN31D5UDJ-7-55
Description Small Signal Field-Effect Transistors;
Datasheet DMN31D5UDJ-7-55 Datasheet
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BVSS84LT1G by Onsemi

BVSS84LT1G

Onsemi

BVSS84LT1G by Onsemi is a P-CHANNEL FET with 50V DS Breakdown Voltage, 0.13A Drain Current, and 10 ohm On Resistance. Ideal for small outline applications in automotive electronics due to AEC-Q101 compliance and -55 to 150°C operating range.
2N7002LT1 by Micro Commercial Components

2N7002LT1

Micro Commercial Components

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Terminal Position: DUAL; No. of Elements: 1;
DMN6075S-7 by Diodes Incorporated

DMN6075S-7

Diodes Incorporated

DMN6075S-7 by Diodes Inc. is a N-channel FET with 60V DS breakdown voltage, 2A ID, and 0.085 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 1.15W. Its small outline package makes it suitable for surface mount designs at temperatures ranging from -55 to 150°C.
BSS84,215 by NXP Semiconductors

BSS84,215

NXP Semiconductors

NXP Semiconductors' BSS84,215 is a P-CHANNEL FET with 50V DS breakdown voltage and 0.13A drain current. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 0.25W.
DMP2035U-7 by Diodes Incorporated

DMP2035U-7

Diodes Incorporated

DMP2035U-7 by Diodes Inc. is a P-channel FET with 20V DS breakdown voltage, 3.6A max drain current, and 0.045 ohm RDS(on). Ideal for switching applications in small outline packages, it operates in enhancement mode with a max temp of 150°C.
2N7002 by Jiangsu Changjiang Electronics Technology

2N7002

Jiangsu Changjiang Electronics Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING;
FDN340P-F095 by Fairchild Semiconductor

FDN340P-F095

Fairchild Semiconductor

Fairchild Semiconductor's FDN340P-F095 is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 2A, Power Dissipation of 0.5W, and operates in ENHANCEMENT MODE. The transistor has a GULL WING terminal form, RECTANGULAR package shape, and METAL-OXIDE SEMICONDUCTOR technology.
MMBFJ113 by Fairchild Semiconductor

MMBFJ113

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; JESD-609 Code: e3; Maximum Drain-Source On Resistance: 100 ohm;
NDS355AN by Fairchild Semiconductor

NDS355AN

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; JESD-30 Code: R-PDSO-G3; Terminal Position: DUAL;
2N7000 by Vishay Semiconductors

2N7000

Vishay Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: BOTTOM; Maximum Drain-Source On Resistance: 5 ohm; Terminal Form: WIRE;
BVSS123LT1G by Onsemi

BVSS123LT1G

Onsemi

BVSS123LT1G by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A max drain current, and 6 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a temp range of -55 to 150 °C. It comes in a small outline package with gull wing terminals for surface mount assembly.
BC548B by Tt Electronics Plc

BC548B

Tt Electronics Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 150 Cel; No. of Elements: 1;
FDS4685 by Fairchild Semiconductor

FDS4685

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Form: GULL WING; Maximum Operating Temperature: 150 Cel;
NDS0605 by Fairchild Semiconductor

NDS0605

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Qualification: Not Qualified;
BSS138-G by Onsemi

BSS138-G

Onsemi

BSS138-G by Onsemi is a N-CHANNEL FET with 50V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and operates in enhancement mode. With a max drain current of 0.22A and on-resistance of 6 ohm, it can handle up to 0.36W power dissipation efficiently.
BSS308PEH6327XTSA1/SAMPLE by Infineon Technologies

BSS308PEH6327XTSA1/SAMPLE

Infineon Technologies

Small Signal Field-Effect Transistors;
2N7002T by Nexperia

2N7002T

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Transistor Element Material: SILICON; Terminal Finish: Matte Tin (Sn);
BVSS138LT1G by Onsemi

BVSS138LT1G

Onsemi

BVSS138LT1G by Onsemi is a N-CHANNEL FET with 50V DS Breakdown Voltage, 0.2A Drain Current, and 3.5 ohm On Resistance. Ideal for SWITCHING applications, it operates b/w -55 to 150 °C and complies with AEC-Q101 standard.
SI2333DDS-T1-GE3 by Vishay Intertechnology

SI2333DDS-T1-GE3

Vishay Intertechnology

SI2333DDS-T1-GE3 by Vishay Intertechnology is a P-channel FET with 12V breakdown voltage and 6A drain current. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 1.7W. The transistor features a small outline package style and can withstand temperatures from -55 to 150°C.
2N7002 by Silicon Standard

2N7002

Silicon Standard

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .225 W; Maximum Drain-Source On Resistance: 7.5 ohm; Transistor Element Material: SILICON;