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| Manufacturer | Diodes Incorporated |
|---|---|
| Manufacturer's Part Number | DMN4031SSDQ-13 |
| Description | N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.6 W; Reference Standard: AEC-Q101; IATF 16949; MIL-STD-202; Package Shape: RECTANGULAR; |
| Datasheet | DMN4031SSDQ-13 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 4.3 A |
| Maximum Pulsed Drain Current (IDM): | 40 A |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| No. of Terminals: | 8 |
| Maximum Power Dissipation (Abs): | 2.6 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G8 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain-Source On Resistance: | .031 ohm |
| Other Names: |
-772-DMN4031SSDQ-13CT -DMN4031SSDQ-13DITR-ND -DMN4031SSDQ-13DICT 31-DMN4031SSDQ-13DKR -772-DMN4031SSDQ-13TR DMN4031SSDQ-13DI -DMN4031SSDQ-13DITR 31-DMN4031SSDQ-13TR DMN4031SSDQ-13DI-ND 31-DMN4031SSDQ-13CT -772-DMN4031SSDQ-13DKR -DMN4031SSDQ-13DICT-ND |
| Maximum Feedback Capacitance (Crss): | 58 pF |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 40 V |
| Reference Standard: | AEC-Q101; IATF 16949; MIL-STD-202 |
| Peak Reflow Temperature (C): | 260 |









