Diodes Incorporated - DMP32D9UFZ-7B-G-55

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DMP32D9UFZ-7B-G-55 by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number DMP32D9UFZ-7B-G-55
Description Small Signal Field-Effect Transistors;
Datasheet DMP32D9UFZ-7B-G-55 Datasheet
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BSS84 by National Semiconductor

BSS84

National Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Operating Mode: ENHANCEMENT MODE; Moisture Sensitivity Level (MSL): 1;
ZVP2106AM1 by Zetex Plc

ZVP2106AM1

Zetex Plc

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (Abs) (ID): .28 A; Minimum DS Breakdown Voltage: 60 V; Peak Reflow Temperature (C): 235;
BSS138-7-F by SPC TECHNOLOGY/ MULTICOMP

BSS138-7-F

SPC TECHNOLOGY/ MULTICOMP

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .2 A; Minimum DS Breakdown Voltage: 50 V; Operating Mode: ENHANCEMENT MODE;
2N7002K by Good-ark Electronics

2N7002K

Good-ark Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
DMG1029SV-7 by Diodes Incorporated

DMG1029SV-7

Diodes Incorporated

DMG1029SV-7 by Diodes Inc. is a Small Signal FET with N/P-channel types, ideal for switching applications. Features include 60V DS breakdown voltage, 0.5A max drain current, and 1W max power dissipation. Utilizes MOSFET tech with 1.7 ohm RDS(on) for efficient operation in enhancement mode at up to 150°C.
BSS84 by Jiangsu Changjiang Electronics Technology

BSS84

Jiangsu Changjiang Electronics Technology

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; JESD-30 Code: R-PDSO-G3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IRFL9110TRPBF by Vishay Siliconix

IRFL9110TRPBF

Vishay Siliconix

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; Maximum Power Dissipation Ambient: 2 W; Terminal Position: SINGLE;
IRLML5103TRPBF by International Rectifier

IRLML5103TRPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .28 W; Transistor Application: SWITCHING; JESD-30 Code: R-PDSO-G3;
SI4447ADY-T1-GE3 by Vishay Intertechnology

SI4447ADY-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SI4447ADY-T1-GE3 is a P-channel FET with 40V breakdown voltage and 7.2A drain current. Ideal for switching applications, it features a built-in diode, 0.045 ohm on-resistance, and operates in enhancement mode at up to 150°C.
FDC658P by Fairchild Semiconductor

FDC658P

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; JESD-609 Code: e3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
FDC5614P_NL by Fairchild Semiconductor

FDC5614P_NL

Fairchild Semiconductor

FDC5614P_NL by Fairchild Semiconductor is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 3A Drain Current, 0.105 ohm On Resistance, and operates in ENHANCEMENT MODE. With GULL WING terminals and SMALL OUTLINE package style, it can handle up to 1.6W power dissipation at temperatures ranging from -55 to 150°C.
2N7000G by Rochester Electronics

2N7000G

Rochester Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Maximum Drain-Source On Resistance: 5 ohm; JESD-30 Code: O-PBCY-W3;
2N7002K by Lite-on Semiconductor

2N7002K

Lite-on Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Package Style (Meter): SMALL OUTLINE; Package Shape: RECTANGULAR;
2N7000 by Calogic

2N7000

Calogic

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Terminal Position: BOTTOM; Maximum Operating Temperature: 150 Cel;
BSS138K by Lite-on Semiconductor

BSS138K

Lite-on Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 10 ohm; Transistor Application: SWITCHING; No. of Terminals: 3;
FDN304P by Fairchild Semiconductor

FDN304P

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Terminal Finish: MATTE TIN; Maximum Operating Temperature: 150 Cel;
MMBF170-7-F by Diodes Incorporated

MMBF170-7-F

Diodes Incorporated

Diodes Inc.'s MMBF170-7-F is a N-channel FET with 60V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. With 0.3W power dissipation and -55 to 150°C operating temperature range, it offers reliable performance in small outline packages.
FDC2512 by Onsemi

FDC2512

Onsemi

The Onsemi FDC2512 is a N-CHANNEL FET with 150V DS breakdown voltage, ideal for switching applications. It features a max drain current of 1.4A and 0.425 ohm drain-source resistance. With a small outline package style and matte tin terminal finish, it operates in enhancement mode up to 150°C, making it suitable for various electronic devices requiring high power dissipation.
FDV301N-F169 by Onsemi

FDV301N-F169

Onsemi

FDV301N-F169 by Onsemi is a N-CHANNEL FET with 25V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and operates in enhancement mode. With a max ID of 0.22A and RDS(on) of 4 ohm, it offers reliable performance in small outline packages.
ZXMN6A07FTA by Diodes Incorporated

ZXMN6A07FTA

Diodes Incorporated

ZXMN6A07FTA by Diodes Inc. is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.93A Drain Current, and 0.3 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with 150°C max temp.