Diodes Incorporated - DMT3022UEV-7

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DMT3022UEV-7 by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number DMT3022UEV-7
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 30 V; Case Connection: DRAIN; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet DMT3022UEV-7 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 17 A
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 6
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-F6
No. of Elements: 2
Package Shape: SQUARE
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Power Dissipation Ambient: 1.8 W
Maximum Drain-Source On Resistance: .022 ohm
Moisture Sensitivity Level (MSL): 1
Maximum Feedback Capacitance (Crss): 67 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 30 V
Additional Features: ESD PROTECTED
Peak Reflow Temperature (C): 260
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