Diodes Incorporated - DMTH4014LDVWQ-13

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DMTH4014LDVWQ-13 by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number DMTH4014LDVWQ-13
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.6 W; Avalanche Energy Rating (EAS): 19.6 mJ; Maximum Drain-Source On Resistance: .015 ohm;
Datasheet DMTH4014LDVWQ-13 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 10.2 A
Maximum Pulsed Drain Current (IDM): 110 A
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 8
Maximum Power Dissipation (Abs): 2.6 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-F8
No. of Elements: 2
Package Shape: SQUARE
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .015 ohm
Avalanche Energy Rating (EAS): 19.6 mJ
Maximum Feedback Capacitance (Crss): 21 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 40 V
Reference Standard: AEC-Q101; MIL-STD-202
Peak Reflow Temperature (C): 260
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