Diodes Incorporated - DRDNB21D-7

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DRDNB21D-7 by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number DRDNB21D-7
Description NPN; Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;
Datasheet DRDNB21D-7 Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 250 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 6
Maximum Power Dissipation (Abs): .2 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 80
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 50 V
Peak Reflow Temperature (C): 260
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