Diodes Incorporated - DST3946DPJ-7B

  1. Home
  2. Diodes Incorporated - DST3946DPJ-7B
DST3946DPJ-7B by Diodes Incorporated

Image shown is a representation only.

Manufacturer Diodes Incorporated
Manufacturer's Part Number DST3946DPJ-7B
Description NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Minimum DC Current Gain (hFE): 30;
Datasheet DST3946DPJ-7B Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 300 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .2 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS
Transistor Element Material: SILICON
Maximum Turn On Time (ton): 70 ns
Polarity or Channel Type: NPN AND PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 30
Terminal Finish: MATTE TIN
JESD-609 Code: e3
No. of Terminals: 6
Maximum Collector-Emitter Voltage: 40 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 250 ns
JESD-30 Code: R-PDSO-F6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Additional Features: HIGH RELIABILITY
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): 260
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BC846B by Taiwan Semiconductor

BC846B

Taiwan Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Moisture Sensitivity Level (MSL): 1;
MMBTA06LT1G by Onsemi

MMBTA06LT1G

Onsemi

MMBTA06LT1G by Onsemi is a NPN BJT transistor with 100 min hFE, 80V VCEO, and 100MHz fT. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals for surface mounting. Operating temperature ranges from -55 to 150°C.
BC817-40 by National Semiconductor

BC817-40

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A;
2N2907A by International Devices

2N2907A

International Devices

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
BC817-40 by Philips Semiconductors

BC817-40

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e3; No. of Elements: 1;
2N2219A by Crimson Semiconductor

2N2219A

Crimson Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
BC547B by Onsemi

BC547B

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
2N3904 by Swampscott Electronics

2N3904

Swampscott Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BC847BS,115 by NXP Semiconductors

BC847BS,115

NXP Semiconductors

BC847BS,115 by NXP Semiconductors is a NPN BJT transistor with 2 elements. It has a min DC current gain of 200 and can handle a max collector-emitter voltage of 45V. Ideal for switching applications, this surface-mount transistor operates at up to 150°C and has a peak reflow temperature of 260°C.
2N2905A by New England Semiconductor

2N2905A

New England Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
BC547B by Motorola

BC547B

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Maximum Power Dissipation Ambient: 1.5 W;
MMBT3904 by Diotec Semiconductor Ag

MMBT3904

Diotec Semiconductor Ag

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Maximum Operating Temperature: 150 Cel;
BC846B by Taitron Components

BC846B

Taitron Components

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
2N2222A by Motorola

2N2222A

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Maximum Collector-Base Capacitance: 8 pF;
MMBT3906 by Comchip Technology

MMBT3906

Comchip Technology

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Terminal Position: DUAL;
2N3904TA by Fairchild Semiconductor

2N3904TA

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BC817-40 by Infineon Technologies

BC817-40

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A;
MMBT3906,215 by Nexperia

MMBT3906,215

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; No. of Elements: 1;
BCX19LT1G by Onsemi

BCX19LT1G

Onsemi

BCX19LT1G by Onsemi is a NPN BJT with 3 terminals, max power dissipation of 0.225W, and min DC current gain of 40. Ideal for small outline applications, it operates at up to 150°C with a max collector-emitter voltage of 45V. Suitable for surface mount designs requiring a compact rectangular package shape.
MMBT2222A by Jiangsu Changjiang Electronics Technology

MMBT2222A

Jiangsu Changjiang Electronics Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .6 A;