DXTN5820DFDB-7 by Diodes Incorporated | Transistors

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Manufacturer	Diodes Incorporated
Manufacturer's Part Number	DXTN5820DFDB-7
Description	NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): 1.25 W; Maximum Collector Current (IC): 6 A;
Datasheet	DXTN5820DFDB-7 Datasheet

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	80 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	6 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Surface Mount:	YES
Terminal Finish:	NICKEL PALLADIUM GOLD
No. of Terminals:	3
Maximum Power Dissipation (Abs):	1.25 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	S-PDSO-N3
No. of Elements:	1
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Maximum Operating Temperature:	150 Cel
Case Connection:	COLLECTOR
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	80
JESD-609 Code:	e4
Minimum Operating Temperature:	-55 Cel
Maximum Collector-Emitter Voltage:	20 V
Maximum Collector-Base Capacitance:	95 pF
Peak Reflow Temperature (C):	260
Maximum VCEsat:	.275 V

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