Diodes Incorporated - DXTN5860DFDB-7

DXTN5860DFDB-7 by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number DXTN5860DFDB-7
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 115 MHz; Maximum Power Dissipation (Abs): 1.25 W; Maximum Collector Current (IC): 6 A;
Datasheet DXTN5860DFDB-7 Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 115 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 6 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Surface Mount: YES
Terminal Finish: NICKEL PALLADIUM GOLD
No. of Terminals: 3
Maximum Power Dissipation (Abs): 1.25 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N3
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 30
JESD-609 Code: e4
Minimum Operating Temperature: -55 Cel
Maximum Collector-Emitter Voltage: 60 V
Additional Features: HIGH RELIABILITY
Maximum Collector-Base Capacitance: 30 pF
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): 260
Maximum VCEsat: .315 V
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