Diodes Incorporated - FXT655STZ

  1. Home
  2. Diodes Incorporated - FXT655STZ
FXT655STZ by Diodes Incorporated

Image shown is a representation only.

Manufacturer Diodes Incorporated
Manufacturer's Part Number FXT655STZ
Description NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 30 MHz; Maximum Collector Current (IC): 1 A; Minimum DC Current Gain (hFE): 20;
Datasheet FXT655STZ Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 30 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 1 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 20
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 150 V
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-W3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: WIRE
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BC847C by Lite-on Semiconductor

BC847C

Lite-on Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 420;
2N2222A by NXP Semiconductors

2N2222A

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Maximum Operating Temperature: 150 Cel;
2N6517BU by Fairchild Semiconductor

2N6517BU

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 40 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;
2N3904 by Renesas Electronics

2N3904

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 540 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BC847C,235 by Nexperia

BC847C,235

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
BC847BW,115 by Nexperia

BC847BW,115

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Minimum Operating Temperature: -65 Cel;
MMBT3904 by Diodes Incorporated

MMBT3904

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .2 A;
2N2219A by Central Semiconductor

2N2219A

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): .8 A;
2N2222A by Good-ark Electronics

2N2222A

Good-ark Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 1.8 W; Maximum Collector Current (IC): .8 A;
BC547B by Micro Electronics

BC547B

Micro Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
2N3906 by Continental Device India

2N3906

Continental Device India

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BC547BT&A by Continental Device India

BC547BT&A

Continental Device India

BC547BT&A by Continental Device India is a NPN BJT with 3 terminals, hFE of 200, and max IC of 0.1A. Ideal for switching applications, it has a max VCE of 45V and operates up to 150°C. The transistor's package is cylindrical with matte tin finish in a through-hole terminal form.
BC807-40W,115 by Nexperia

BC807-40W,115

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Package Style (Meter): SMALL OUTLINE;
2N2219A by Microsemi

2N2219A

Microsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Package Shape: ROUND; JESD-30 Code: O-MBCY-W3;
BC846-B by Samsung

BC846-B

Samsung

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; No. of Terminals: 3;
2N2905A by Hi-tron Semiconductor

2N2905A

Hi-tron Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
BC847B by Siemens

BC847B

Siemens

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BC817-40WT1G by Onsemi

BC817-40WT1G

Onsemi

BC817-40WT1G by Onsemi is a NPN BJT transistor with hFE of 40, Vce of 45V, and fT of 100MHz. Ideal for small signal applications in electronics due to its high transition frequency and low collector current rating. Its Gull Wing terminals and small outline package make it suitable for surface mount PCB designs.
BC847B by Promax-johnton

BC847B

Promax-johnton

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Qualification: Not Qualified; Transistor Application: AMPLIFIER;
MMBT2907A by Motorola

MMBT2907A

Motorola

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;