Diodes Incorporated - LD9N03

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LD9N03 by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number LD9N03
Description Power Field-Effect Transistors;
Datasheet LD9N03 Datasheet
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Infineon's IRLML6401TRPBF-1 is a P-channel FET with 12V DS breakdown voltage, 34A IDM, and 0.05 ohm RDS(on). Ideal for power management applications due to its small outline package style and high operating temperature of 150°C.
IRFP450PBF by Vishay Intertechnology

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Vishay Intertechnology's IRFP450PBF is a N-CHANNEL Power FET with 500V DS Breakdown Voltage and 56A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 180W and operates in ENHANCEMENT MODE at up to 150°C.
BSS138 by Calogic

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NCV8406ASTT1G by Onsemi

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NCV8406ASTT1G by Onsemi is an N-CHANNEL FET for SWITCHING applications. It features a 60V DS Breakdown Voltage, 0.24 ohm Drain-Source On Resistance, and 1.81W Power Dissipation. With a PLASTIC/EPOXY body and GULL WING terminals, it operates in temperatures from -40 to 150 °C.
NTD3055-094T4G by Onsemi

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BSS123 by Calogic

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BS170 by North American Philips Discrete Products Div

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IRF9530NSTRLPBF by International Rectifier

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P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Transistor Element Material: SILICON; JESD-30 Code: R-PSSO-G2;
IRLR2908TRPBF by Infineon Technologies

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FDS6890A by Fairchild Semiconductor

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IRF7507TRPBF by International Rectifier

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International Rectifier

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Maximum Pulsed Drain Current (IDM): 19 A; Package Style (Meter): SMALL OUTLINE;
BBS3002-DL-1E by Onsemi

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IRF7328TRPBF by Infineon Technologies

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2N7002 by Comchip Technology

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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE;
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IRF7309TRPBF by Infineon is a Power FET with N-Channel and P-Channel types, suitable for switching applications. It features 2 elements with built-in diode, a max drain current of 4A, and a min DS breakdown voltage of 30V. With a package style of small outline and operating temperature up to 150°C, it's ideal for compact electronic devices requiring efficient power management.
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