Diodes Incorporated - LTP85N07

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LTP85N07 by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number LTP85N07
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain-Source On Resistance: .009 ohm; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; JEDEC-95 Code: TO-220AB;
Datasheet LTP85N07 Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 287 mJ
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 85 A
JEDEC-95 Code: TO-220AB
Maximum Pulsed Drain Current (IDM): 340 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 75 V
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .009 ohm
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