Diodes Incorporated - LTV4C06

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LTV4C06 by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number LTV4C06
Description Power Field-Effect Transistors;
Datasheet LTV4C06 Datasheet
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IRF540PBF by Vishay Intertechnology

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DMG2301L-7 by Diodes Incorporated

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FQP27P06_SW82127 by Onsemi

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FQP27P06_SW82127 by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage and 108A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode and operates in ENHANCEMENT MODE. With a max power dissipation of 120W, this transistor has a -55 to 175 °C operating temperature range.
FDB52N20TM by Fairchild Semiconductor

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IRFB4115PBF by Infineon Technologies

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IRFB4115PBF by Infineon is a N-CHANNEL Power FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 420A and EAS of 830mJ, making it suitable for high-power operations. With an operating temperature up to 175°C and 0.011 ohm RDS(on), this transistor offers reliable performance in various industrial settings.
IRF640NLPBF by International Rectifier

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STB6NK90ZT4 by STMicroelectronics

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IRF640 by Samsung

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IRFR5305TRLPBF by Infineon Technologies

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FDMS86101DC by Fairchild Semiconductor

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BSP315P by Infineon Technologies

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STW4N150 by STMicroelectronics

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IRF3205PBF by Infineon is a N-CHANNEL FET with 55V DS Breakdown Voltage and 390A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 200W and operates in ENHANCEMENT MODE. With 0.008 ohm RDS(on), it can handle up to 75A ID current efficiently.