Diodes Incorporated - LV18N03A

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LV18N03A by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number LV18N03A
Description Power Field-Effect Transistors;
Datasheet LV18N03A Datasheet
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FDS6890A by Onsemi is an N-CHANNEL Power FET with 20V DS Breakdown Voltage and 0.034 ohm RDS(ON). It features 2 elements with built-in diode, suitable for SWITCHING applications. This small outline transistor has a max operating temperature of 150°C and can handle up to 20A pulsed drain current.
IRLML0060TRPBF by Infineon Technologies

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JANTX2N6796 by Intersil

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; Terminal Position: BOTTOM; Maximum Drain Current (Abs) (ID): 8 A;
IPD90P04P405ATMA1 by Infineon Technologies

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SI7850DP-T1-GE3 by Vishay Intertechnology

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IRF7507TRPBF by International Rectifier

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N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Maximum Pulsed Drain Current (IDM): 19 A; Package Style (Meter): SMALL OUTLINE;
BSP170PH6327XTSA1 by Infineon Technologies

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IRF540PBF by Vishay Intertechnology

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SI7469DP-T1-GE3 by Vishay Intertechnology

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IRFR5505TRPBF by International Rectifier

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