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| Manufacturer | Diodes Incorporated |
|---|---|
| Manufacturer's Part Number | MJD31CHQ-13 |
| Description | NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 2.6 W; Maximum Collector Current (IC): 3 A; |
| Datasheet | MJD31CHQ-13 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 3 MHz |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 3 A |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Transistor Application: | SWITCHING |
| Surface Mount: | YES |
| No. of Terminals: | 2 |
| Maximum Power Dissipation (Abs): | 2.6 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PSSO-G2 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | COLLECTOR |
| Other Names: |
31-MJD31CHQ-13DKR 31-MJD31CHQ-13TR 31-MJD31CHQ-13CT |
| JEDEC-95 Code: | TO-252 |
| Polarity or Channel Type: | NPN |
| Minimum DC Current Gain (hFE): | 10 |
| Minimum Operating Temperature: | -55 Cel |
| Maximum Collector-Emitter Voltage: | 100 V |
| Maximum Collector-Base Capacitance: | 21 pF |
| Reference Standard: | AEC-Q101; IATF 16949; MIL-STD-202 |
| Maximum VCEsat: | 1.2 V |
