Diodes Incorporated - MMDT1DA1

  1. Home
  2. Diodes Incorporated - MMDT1DA1
MMDT1DA1 by Diodes Incorporated

Image shown is a representation only.

Manufacturer Diodes Incorporated
Manufacturer's Part Number MMDT1DA1
Description NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .6 A; No. of Elements: 2; Transistor Element Material: SILICON;
Datasheet MMDT1DA1 Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): .6 A
Maximum Power Dissipation (Abs): .2 W
Transistor Element Material: SILICON
No. of Elements: 2
Sub-Category: Other Transistors
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 35
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

2N7002DW-G by Weitron Technology

2N7002DW-G

Weitron Technology

Other Transistors;
BD140 by Toshiba

BD140

Toshiba

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
BDX53C by Tt Electronics Plc

BDX53C

Tt Electronics Plc

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 20 MHz; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 8 A;
MPSA42 by Sprague Electric

MPSA42

Sprague Electric

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;
BC817-16 by Weitron Technology

BC817-16

Weitron Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
BC807-25 by Vishay Intertechnology

BC807-25

Vishay Intertechnology

Vishay Intertechnology's BC807-25 is a PNP transistor with max power dissipation of 0.35W, min DC current gain of 160, and max collector current of 0.5A. Ideal for applications requiring single configuration transistors in surface mount technology, operating up to 150°C.
BC847C by North American Philips Discrete Products Div

BC847C

North American Philips Discrete Products Div

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
TIP147 by Philips Semiconductors

TIP147

Philips Semiconductors

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Maximum Operating Temperature: 150 Cel;
BC327-25 by Tt Electronics Plc

BC327-25

Tt Electronics Plc

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 160;
2010 by Acrian

2010

Acrian

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 32 W; Maximum Collector Current (IC): 2.5 A; No. of Elements: 1;
TIP35C by Semitronics

TIP35C

Semitronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;
BC846 by Infineon Technologies

BC846

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BC847C by Shanghai Lunsure Electronic Technology

BC847C

Shanghai Lunsure Electronic Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
3001 by Asi Semiconductor

3001

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .25 A; Maximum Operating Temperature: 175 Cel;
2N2219A by Shanghai Lunsure Electronic Technology

2N2219A

Shanghai Lunsure Electronic Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
TIP32C by Unisonic Technologies

TIP32C

Unisonic Technologies

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
BDX53C by Asi Semiconductor

BDX53C

Asi Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 20 MHz; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 8 A;
IRF640 by Weitron Technology

IRF640

Weitron Technology

Other Transistors;
2N3906 by Harris Semiconductor

2N3906

Harris Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BC847B by Sprague Electric

BC847B

Sprague Electric

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;