MMDT5451Q-7 by Diodes Incorporated | Transistors

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Manufacturer	Diodes Incorporated
Manufacturer's Part Number	MMDT5451Q-7
Description	NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .32 W; Maximum Collector Current (IC): .2 A;
Datasheet	MMDT5451Q-7 Datasheet

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	100 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.2 A
Configuration:	SEPARATE, 2 ELEMENTS
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Polarity or Channel Type:	NPN AND PNP
Surface Mount:	YES
Minimum DC Current Gain (hFE):	30
Minimum Operating Temperature:	-55 Cel
No. of Terminals:	6
Maximum Power Dissipation (Abs):	.32 W
Maximum Collector-Emitter Voltage:	160 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Maximum Collector-Base Capacitance:	6 pF
Reference Standard:	AEC-Q101; IATF 16949
Maximum VCEsat:	.2 V

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