Diodes Incorporated - MMST5551Q-7-F

MMST5551Q-7-F by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number MMST5551Q-7-F
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .2 A; JESD-30 Code: R-PDSO-G3;
Datasheet MMST5551Q-7-F Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 100 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .2 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 3
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Moisture Sensitivity Level (MSL): 1
Other Names: 31-MMST5551Q-7-FTR
MMST5551Q-7-FDI
31-MMST5551Q-7-FDKR
31-MMST5551Q-7-FCT
MMST5551Q-7-FDI-ND
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 30
JESD-609 Code: e3
Maximum Collector-Emitter Voltage: 160 V
Additional Features: HIGH RELIABILITY
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): 260
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