Diodes Incorporated - MPSA43STOB

  1. Home
  2. Diodes Incorporated - MPSA43STOB
MPSA43STOB by Diodes Incorporated

Image shown is a representation only.

Manufacturer Diodes Incorporated
Manufacturer's Part Number MPSA43STOB
Description NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): .5 A; Package Shape: RECTANGULAR;
Datasheet MPSA43STOB Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 50 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .5 A
Configuration: SINGLE
Transistor Element Material: SILICON
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 50
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 200 V
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Reference Standard: CECC
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

2N2219A by General Transistor

2N2219A

General Transistor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
BC817-40 by General Semiconductor

BC817-40

General Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .8 A;
MMBTA92LT1G by Onsemi

MMBTA92LT1G

Onsemi

MMBTA92LT1G by Onsemi is a PNP BJT with 300V VCEO, 0.5A IC, and 50MHz fT. Ideal for small signal applications in electronics due to its compact SOT-23 package and high transition frequency. Operates b/w -55°C to 150°C making it suitable for various temperature conditions.
2N2907A by Crystalonics

2N2907A

Crystalonics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
2N3904 by Motorola

2N3904

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
NSM4002MR6T1G by Onsemi

NSM4002MR6T1G

Onsemi

NSM4002MR6T1G by Onsemi is a NPN BJT with hFE of 100, IC of 0.5A, and fT of 100MHz. Ideal for surface mount applications in electronics requiring high-speed signal amplification up to 150°C.
2N3906 by New Jersey Semiconductor Products

2N3906

New Jersey Semiconductor Products

PNP; Configuration: SINGLE; Nominal Transition Frequency (fT): 250 MHz; No. of Elements: 1; JESD-609 Code: e0; Transistor Element Material: SILICON;
SMMBTA56LT1G by Onsemi

SMMBTA56LT1G

Onsemi

SMMBTA56LT1G by Onsemi is a PNP BJT transistor with 3 terminals, hFE of 100, and max. power dissipation of 0.3W. Ideal for amplifier applications, it operates at up to 150°C, with VCE of 80V and IC of 0.5A. It comes in a small outline package with matte tin finish and AEC-Q101 reference standard compliance.
BC547B by Central Semiconductor

BC547B

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Package Shape: ROUND;
2N2907A by Microchip Technology

2N2907A

Microchip Technology

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .6 A; Terminal Position: BOTTOM; No. of Elements: 1;
2N2905A by New England Semiconductor

2N2905A

New England Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
BC817-25 by Multicomp Pro

BC817-25

Multicomp Pro

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): .5 A; Minimum Operating Temperature: -65 Cel;
BC847B by Kodenshi Auk

BC847B

Kodenshi Auk

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;
MMBT2222A by Motorola

MMBT2222A

Motorola

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Maximum Turn Off Time (toff): 35 ns;
BC817-25 by Changzhou Galaxy Century Microelectronics

BC817-25

Changzhou Galaxy Century Microelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): .5 A; No. of Terminals: 3;
MMBT2907A by General Semiconductor

MMBT2907A

General Semiconductor

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; No. of Elements: 1;
2N2219A by Semiconductor Technology

2N2219A

Semiconductor Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
2N3904TFR by Rochester Electronics

2N3904TFR

Rochester Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; No. of Elements: 1;
BC846BS,115 by Nexperia

BC846BS,115

Nexperia

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; No. of Terminals: 6;
JANTX2N2222AUB by Silicon Transistor

JANTX2N2222AUB

Silicon Transistor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;