Diodes Incorporated - UZAMP002H6TA

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Terminal Finish: Gold (Au) - with Nickel (Ni) barrier;

Mini-circuits ERA-3SM+ is a wideband low power RF amplifier with 15.4 dB gain and 50 ohm impedance. It operates from 0 to 3000 MHz, handling up to 13 dBm CW input power. Ideal for surface mount applications in RF and microwave systems, it has a compact plastic/epoxy package and requires only a 3V supply.

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 10; Technology: GAN; Maximum Supply Current: 400 mA; Maximum Voltage Standing Wave Ratio: 10;

WIDE BAND LOW POWER;

Analog Devices' HMC8500PM5ETR is a GaN wide band high power RF amplifier with 12 dB gain, operating from 10 MHz to 2800 MHz. It has a max input power of 33 dBm and VSWR of 6, suitable for applications requiring high power amplification in RF and microwave systems. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation at temperatures ranging from -40°C to 85°C.

Qorvo's NBB-400-T1 is a ceramic RF amplifier with 20 dBm CW input power, 1.9 VSWR, and 15.5 dB gain. Ideal for wideband low-power applications in the 0-8000 MHz range, it operates at temperatures from -45 to 85°C and requires a 3.9V supply voltage.

Analog Devices' HMC960LP4ETR is a wide band high power RF amplifier with 0 dB gain, operating from 0 to 100 MHz. It has 24 terminals, matte tin finish, and operates b/w -40°C to +85°C. Ideal for applications requiring surface mount components in RF and microwave systems.

MAAP-010168-000000 by M/a-com Technology Solutions is a wide band high power RF module with 19 dB gain, operating from 500 MHz to 3000 MHz. It can handle up to 24 dBm CW input power and operates in temperatures ranging from -40°C to 85°C. Ideal for RF & Microwave applications requiring high power amplification.

NXP Semiconductors' BGA2817,115 is a RF & Microwave Amplifier with 3.3V power supply, 6 terminals, and max operating temp of 85°C. It features surface mounting and tin terminal finish. Ideal for applications requiring high-frequency signal amplification in various electronic devices.

WIDE BAND HIGH POWER;

MAAL-010704-TR3000 by M/a-com Technology Solutions is a GAAS RF amplifier with 10dB gain, operating from 100MHz to 3500MHz. It has a max input power of 24dBm and operates on 3/5V supplies. Ideal for wideband low-power applications requiring surface mount construction.

Broadcom's MGA-81563 is a GAAS RF amplifier with 6 terminals, operating from -40°C to 85°C. It requires 3V power supply, draws max 51mA current, and has a surface mount package. Ideal for applications requiring high-frequency signal amplification in various electronic devices.

WIDE BAND LOW POWER; Gain: 10 dB; Minimum Operating Frequency: 24000 MHz; Additional Features: LOW NOISE; Construction: COMPONENT; Characteristic Impedance: 50 ohm;

ADL8142ACPZN-R7 by Analog Devices is a PHEMT RF amplifier with 24.5 dB gain, operating b/w 23-31 GHz. It has a max input power of 20 dBm and VSWR of 1.38, suitable for wideband low-power applications in RF & microwave systems. With surface mounting feature, it operates from -40 to 85°C with a supply voltage of 2V.

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 3; Maximum Operating Frequency: 6000 MHz; Construction: COMPONENT;

The Qorvo TGA2567-SM is a wide band medium power RF amplifier with 17 dB gain, operating from 2-20 GHz. It can handle up to 22 dBm CW input power and has a characteristic impedance of 50 ohms. Ideal for applications requiring high frequency amplification in environments ranging from -40°C to 85°C.

WIDE BAND LOW POWER;

WIDE BAND HIGH POWER; Terminal Finish: Gold (Au); JESD-609 Code: e4;

Analog Devices' HMC871LC5 is a wide band low power RF amplifier with 10 dB gain and 50 ohm impedance. It operates from 0 to 20000 MHz, handling up to 10 dBm CW input power. Ideal for applications requiring high frequency amplification in environments ranging from -40°C to 85°C.

Qorvo's RF5110GSR is a wideband medium power amplifier with 33dB gain, operating from 150MHz to 960MHz. It has a max input power of 13dBm and VSWR of 10, suitable for RF & microwave applications requiring high performance in a compact form factor. The hybrid construction and surface mount feature make it ideal for various communication systems.