ZTD09N50DE6QTA by Diodes Incorporated | Transistors

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Manufacturer	Diodes Incorporated
Manufacturer's Part Number	ZTD09N50DE6QTA
Description	NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 215 MHz; Maximum Power Dissipation (Abs): 1.7 W; Maximum Collector Current (IC): 1 A;
Datasheet	ZTD09N50DE6QTA Datasheet

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	215 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	1 A
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SEPARATE, 2 ELEMENTS
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	6
Maximum Power Dissipation (Abs):	1.7 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Moisture Sensitivity Level (MSL):	1
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	20
JESD-609 Code:	e3
Maximum Collector-Emitter Voltage:	50 V
Additional Features:	HIGH RELIABILITY
Reference Standard:	AEC-Q101
Peak Reflow Temperature (C):	260

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