Diodes Incorporated - ZTX341DWP

  1. Home
  2. Diodes Incorporated - ZTX341DWP
ZTX341DWP by Diodes Incorporated

Image shown is a representation only.

Manufacturer Diodes Incorporated
Manufacturer's Part Number ZTX341DWP
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; No. of Terminals: 2; Package Style (Meter): UNCASED CHIP;
Datasheet ZTX341DWP Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 80 MHz
Package Body Material: UNSPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 30
No. of Terminals: 2
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 100 V
Terminal Position: UPPER
Package Style (Meter): UNCASED CHIP
JESD-30 Code: S-XUUC-N2
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

MMBT3906TT1G by Onsemi

MMBT3906TT1G

Onsemi

MMBT3906TT1G by Onsemi is a PNP small signal BJT transistor with a max collector-emitter voltage of 40V. It has a min DC current gain of 30 and can handle a max collector current of 0.2A. This transistor is commonly used in amplifier applications due to its high transition frequency of 250MHz.
2N2905A by Raytheon Semiconductor

2N2905A

Raytheon Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
2N2222A by Surge Components

2N2222A

Surge Components

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; No. of Terminals: 3;
BC547CTFR by Onsemi

BC547CTFR

Onsemi

BC547CTFR by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 45V, min. DC current gain of 420, and max. power dissipation of 0.625W. It is commonly used for switching applications due to its single configuration and cylindrical package shape.
2N2905A by National Semiconductor

2N2905A

National Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
JANTX2N2222A by Raytheon Semiconductor

JANTX2N2222A

Raytheon Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Package Shape: ROUND; No. of Terminals: 3; Terminal Form: WIRE;
MMBT3904 by Comchip Technology

MMBT3904

Comchip Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .2 A;
2N2905A by Space Power Electronics

2N2905A

Space Power Electronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
BC817-25 by Lite-on Semiconductor

BC817-25

Lite-on Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Transistor Application: AMPLIFIER;
BC847C-13-F by Diodes Incorporated

BC847C-13-F

Diodes Incorporated

Diodes Inc. BC847C-13-F is a NPN BJT transistor with max. power dissipation of 0.35W, hFE of 420, and fT of 300MHz. Ideal for switching applications in automotive electronics due to AEC-Q101 standard compliance and max. collector-emitter voltage of 45V.
2N2222AUA by Optek Technology

2N2222AUA

Optek Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC547C by Microsemi

BC547C

Microsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .1 A; Terminal Form: THROUGH-HOLE; Package Shape: ROUND;
2N2222A by Diotec Semiconductor Ag

2N2222A

Diotec Semiconductor Ag

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Maximum Time At Peak Reflow Temperature (s): 10;
2N2222AUA by Cobham Plc

2N2222AUA

Cobham Plc

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 50 V;
BC847-B by Samsung

BC847-B

Samsung

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Transistor Application: SWITCHING;
2N3904 by Vishay Sprague

2N3904

Vishay Sprague

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; No. of Terminals: 3; Package Shape: ROUND;
2N3906 by Crimson Semiconductor

2N3906

Crimson Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BC817.25 by Central Semiconductor

BC817.25

Central Semiconductor

BC817.25 by Central Semiconductor is a NPN BJT with 160 min hFE and 45V VCEO, ideal for small signal applications. With a max power dissipation of 0.3W and fT of 200MHz, it's suitable for high-frequency circuits in compact designs. This Gull Wing package transistor operates up to 150°C, making it versatile for various electronic devices.
MMBT3904 by National Semiconductor

MMBT3904

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .2 A;
BC817-40 by Panjit International

BC817-40

Panjit International

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Transistor Application: AMPLIFIER;