Diodes Incorporated - ZTX360L

NXP Semiconductors' BC847,215 is a NPN BJT transistor with VCEsat of 0.6V, hFE of 110, and IC of 0.1A. Ideal for switching applications in small outline packages with 3 terminals. Operates at max temp of 150°C and has a transition frequency of 100MHz.

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Package Body Material: METAL;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON;

Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Terminal Finish: TIN LEAD;

NXP Semiconductors' BC846BPN,115 is a Small Signal BJT with NPN and PNP types. It has 2 elements for switching applications, with max power dissipation of 0.3W. Operating at up to 150°C, it features a collector-emitter voltage of 65V and transition frequency of 100MHz in a small outline package.

The Onsemi MMBT2222A is a NPN BJT transistor with 3 terminals, ideal for switching applications. It has a max collector-emitter voltage of 40V, max collector current of 1A, and min DC current gain of 75. With a small outline package style and peak reflow temp of 260°C, it operates b/w -55 to 150°C efficiently.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Terminal Finish: TIN;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; JESD-30 Code: O-MBCY-W3;

BC547BTF by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 45V and max. collector current of 0.1A, ideal for switching applications. With a min. DC current gain of 200 and nominal transition frequency of 300MHz, it offers reliable performance in a cylindrical package suitable for through-hole mounting. Operating at up to 150°C, this transistor has a max power dissipation of 0.625W making it versatile for various electronic designs.

PBHV8540X,115 by Nexperia is a NPN BJT transistor with hFE of 100. It has VCE of 400V and IC of 0.5A, suitable for switching applications. This small outline transistor operates at fT of 30MHz, making it ideal for high-speed electronic circuits.

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .2 A;

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .6 A;

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Minimum DC Current Gain (hFE): 30;

SMMBT3904WT1G by Onsemi is a NPN BJT transistor with 3 terminals, hFE of 30, and max. power dissipation of 0.15W. Ideal for amplifier applications, it operates at up to 150°C, with Vce(max) of 40V and fT of 300MHz.

ULN2003AIPWR by Texas Instruments is a NPN BJT with 7 elements, max. collector current of 0.5A, and max. collector-emitter voltage of 50V. It's used for switching applications in surface mount setups due to its complex configuration and small outline package style.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .6 A; Terminal Finish: TIN; No. of Elements: 1;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Qualification: Not Qualified; Transistor Application: AMPLIFIER;

BC847BLT1G by Onsemi is a NPN BJT transistor for switching applications. It has VCEsat of 0.6V, hFE of 200, and fT of 100MHz. With max ratings of 45V VCEO and 0.1A IC, it operates b/w -55 to 150°C.