Diodes Incorporated - ZTX452DWP

JANTX2N2222AUA by Microchip is a NPN BJT transistor with 4 terminals, ideal for switching applications. It has a max power dissipation of 0.5W, hFE of 30, and can handle up to 0.8A collector current. With a max operating temp of 200°C and fT of 250MHz, it meets MIL-19500/255 standards for high-performance electronics.

Diodes Inc's BC817-25-7-F is a NPN small signal BJT transistor with a max collector-emitter voltage of 45V and max collector current of 0.5A. It is commonly used for switching applications due to its high DC current gain (hFE) of 100 and fast nominal transition frequency of 100MHz.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): 1 A; Package Body Material: PLASTIC/EPOXY;

SMBTA42E6327HTSA1 by Infineon is a NPN BJT with max. VCE of 300V, IC of 0.5A, and hFE of 40. Ideal for small signal applications in electronics due to its high transition frequency of 50MHz and temp range up to 150°C. Its Gull Wing terminals make it suitable for surface mount designs.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 420;

Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Terminal Finish: TIN LEAD;

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Package Body Material: PLASTIC/EPOXY;

Toshiba's ULN2803AFWG(O,ELM) is an NPN BJT with 8 Darlington banks, built-in diode/resistor. Ideal for switching applications, it has a hFE of 1000 and can handle up to 50V/0.5A. This surface-mount transistor comes in a small outline package with Gull Wing terminals.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 45 V;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Maximum Collector-Emitter Voltage: 60 V;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; JESD-30 Code: O-MBCY-W3; JEDEC-95 Code: TO-18;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .5 A;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Maximum Time At Peak Reflow Temperature (s): 10;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Maximum Operating Temperature: 150 Cel;

Diodes Inc. BC846B-7-F is a NPN BJT transistor with hFE of 200, VCE of 65V, and IC of 0.1A. Ideal for switching applications in small outline packages with Gull Wing terminals. Operates b/w -65 to 150°C, meeting AEC-Q101 standards for automotive use.

BC846BW-7-F by Diodes Inc. is a NPN small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 65V and a max collector current of 0.1A. It is commonly used for switching applications due to its high DC current gain (hFE) of 200 and fast nominal transition frequency (fT) of 300MHz.

BC817.40 by Central Semiconductor is a NPN small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 45V and a max collector current of 0.5A. It has a min DC current gain of 250 and can operate at temperatures up to 150°C. This transistor is commonly used in various electronic applications requiring low power dissipation and high frequency performance, such as amplifiers and switching circuits.