Diodes Incorporated - ZV832BV2TA

  1. Home
  2. Diodes Incorporated - ZV832BV2TA
ZV832BV2TA by Diodes Incorporated

Image shown is a representation only.

Manufacturer Diodes Incorporated
Manufacturer's Part Number ZV832BV2TA
Description VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; Maximum Repetitive Peak Reverse Voltage: 25 V; Nominal Diode Capacitance: 22 pF; Peak Reflow Temperature (C): 260;
Datasheet ZV832BV2TA Datasheet
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): 30
Minimum Quality Factor: 200
Diode Type: VARIABLE CAPACITANCE DIODE
Maximum Repetitive Peak Reverse Voltage: 25 V
Peak Reflow Temperature (C): 260
Sub-Category: Varactors
Surface Mount: YES
Nominal Diode Capacitance: 22 pF
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

MV2115 by New Jersey Semiconductor Products

MV2115

New Jersey Semiconductor Products

VARIABLE CAPACITANCE DIODE; Maximum Operating Temperature: 150 Cel; No. of Elements: 1; Minimum Operating Temperature: -55 Cel; Diode Element Material: SILICON; Config: SINGLE;
1N5704 by Onsemi

1N5704

Onsemi

1N5704 by Onsemi is a Varactor Diode with 33pF capacitance, 65V breakdown voltage, and 0.00000002uA reverse current. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification.
SVCA361 by Onsemi

SVCA361

Onsemi

VARIABLE CAPACITANCE DIODE; Surface Mount: NO; Nominal Diode Capacitance: 500 pF; Minimum Quality Factor: 200; Maximum Repetitive Peak Reverse Voltage: 16 V;
MV209RLRE by Onsemi

MV209RLRE

Onsemi

MV209RLRE by Onsemi is a varactor diode with a min quality factor of 200, nominal capacitance of 29 pF, and very high frequency band. It is used in applications requiring variable capacitance diodes for tuning circuits at temperatures up to 125 °C.
BB204G-AMMOPAK by NXP Semiconductors

BB204G-AMMOPAK

NXP Semiconductors

BB204G-AMMOPAK by NXP Semiconductors is a variable capacitance diode featuring a 2.5 min capacitance ratio and a cylindrical plastic/epoxy package. With 3 terminals in a common cathode config, it’s ideal for RF tuning applications. Its silicon elements ensure reliable performance in various circuits.
BB405B153 by NXP Semiconductors

BB405B153

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BB131,115 by NXP Semiconductors

BB131,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
934042250135 by NXP Semiconductors

934042250135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BB910116 by NXP Semiconductors

BB910116

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
MDX640 by Texas Instruments

MDX640

Texas Instruments

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: .9 pF; Maximum Repetitive Peak Reverse Voltage: 12 V; Minimum Quality Factor: 33;
LV2205RLRP by Onsemi

LV2205RLRP

Onsemi

LV2205RLRP by Onsemi is a Varactor Diode with 15pF capacitance, 25V breakdown voltage, and 400 min quality factor. It is ideal for RF tuning applications due to its variable capacitance and high-quality factor performance at temperatures up to 150 °C.
MDX588D by Texas Instruments

MDX588D

Texas Instruments

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 6 V; Minimum Quality Factor: 30; Nominal Diode Capacitance: .225 pF;
BB142 by NXP Semiconductors

BB142

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MV2109RLRAG by Onsemi

MV2109RLRAG

Onsemi

MV2109RLRAG by Onsemi is a varactor diode with a min quality factor of 200, ideal for high frequency to ultra high frequency applications. It features a nominal capacitance of 33 pF and a max power dissipation of 0.28 W, making it suitable for RF tuning circuits in communication systems.
SMV1405-079LF by Skyworks Solutions

SMV1405-079LF

Skyworks Solutions

SMV1405-079LF by Skyworks Solutions is a varactor diode with 3200 min. quality factor, 2.1 pF nominal capacitance, and 30 V breakdown voltage. Ideal for S band applications due to its abrupt variable capacitance diode classification and small outline package style for surface mount usage.
BB417116 by NXP Semiconductors

BB417116

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
SMVA1253-079LF by Skyworks Solutions

SMVA1253-079LF

Skyworks Solutions

SMVA1253-079LF by Skyworks Solutions is a single hyperabrupt varactor diode with 53pF capacitance, suitable for ultra high frequency applications. It operates b/w -55 to 125 °C with a max power dissipation of 0.25W and reverse voltage of 15V. Ideal for surface mount designs in various electronic systems.
BB809 by NXP Semiconductors

BB809

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
MV2101RL1 by Onsemi

MV2101RL1

Onsemi

MV2101RL1 by Onsemi is a Varactor Diode with 6.8pF capacitance, 30V breakdown voltage, and 450 min quality factor. It is ideal for RF tuning applications due to its variable capacitance feature and can operate at temperatures up to 150 °C.
BB909A133 by NXP Semiconductors

BB909A133

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;