Diodes Incorporated - ZVP2106ASTOA

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Maximum Drain-Source On Resistance: 6 ohm; Minimum DS Breakdown Voltage: 100 V;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; Transistor Application: SWITCHING; Maximum Time At Peak Reflow Temperature (s): 30;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 1.2 A; Transistor Element Material: SILICON;

Vishay Intertechnology's 2N7000 is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.2A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 0.4W. The transistor features a METAL-OXIDE SEMICONDUCTOR technology and can withstand temperatures from -55 to 150 °C.

Small Signal Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Drain Current (Abs) (ID): 3.4 A; Maximum Pulsed Drain Current (IDM): 17 A; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30;

Small Signal Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 350 W; Package Body Material: PLASTIC/EPOXY; Maximum Drain-Source On Resistance: 2 ohm;

LND150N3-GP013 by Microchip is a N-CHANNEL FET with 500V DS breakdown voltage, 0.03A ID, and 1000 ohm RDS(on). Ideal for switching applications, it operates in depletion mode with a max temp of 150°C. The transistor features a built-in diode and has a package style of cylindrical.

NTR1P02LT1G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 1.3A Drain Current, and 0.22ohm On Resistance. Ideal for SWITCHING applications in small outline packages, operating from -55 to 150°C with Matte Tin finish for SMT assembly.

FDC6420C by Onsemi is a Small Signal FET with N/P-Channel, 2 elements w/ diode. It has a max drain current of 3A, on-resistance of 0.07 ohm, and operates in enhancement mode for switching applications. This MOSFET comes in a small outline package with matte tin finish, suitable for surface mount assembly at up to 260°C peak reflow temp.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; JESD-30 Code: R-PDSO-G3; Maximum Feedback Capacitance (Crss): 5 pF;

SI2318CDS-T1-GE3 by Vishay Intertechnology is a N-channel FET with 40V DS breakdown voltage and 5.6A max drain current. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 2.1W. This small outline transistor features a built-in diode and matte tin terminal finish for efficient performance in various electronic circuits.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Terminal Position: DUAL; Minimum DS Breakdown Voltage: 60 V;

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; JESD-30 Code: R-PDSO-G3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

Infineon Technologies' SN7002WH6327XTSA1 is a small signal N-channel FET with a min DS breakdown voltage of 60V. It features a single configuration with built-in diode and operates in enhancement mode. This surface mount transistor, made of silicon, has a max drain current of 0.23A and a max drain-source on resistance of 5 ohm. It is commonly used in automotive applications due to its AEC-Q101 reference standard and moisture sensitivity level of 1.

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; Moisture Sensitivity Level (MSL): 1; Maximum Operating Temperature: 150 Cel;

NXP Semiconductors' 2N7002BKV,115 is a N-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 0.34A Drain Current, and 1.6 ohm On Resistance. With a max temp of 150°C, it's ideal for small outline packages in ENHANCEMENT MODE circuits.

BSS209PWH6327XTSA1 by Infineon Technologies is a P-CHANNEL FET with 20V DS Breakdown Voltage, 0.63A ID, and 0.55 ohm RDS(ON). It is used in small outline applications requiring a single configuration with built-in diode for enhancement mode operation.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; JEDEC-95 Code: TO-92; Terminal Form: THROUGH-HOLE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Operating Mode: DEPLETION MODE; No. of Terminals: 3;