ZX3CD2S1M832TC by Diodes Incorporated | Transistors

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Manufacturer	Diodes Incorporated
Manufacturer's Part Number	ZX3CD2S1M832TC
Description	PNP; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 3.5 A;
Datasheet	ZX3CD2S1M832TC Datasheet

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	180 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	3.5 A
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	10
Maximum Power Dissipation (Abs):	3 W
Terminal Position:	QUAD
Package Style (Meter):	FLATPACK
JESD-30 Code:	R-PQFP-F10
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Maximum Operating Temperature:	150 Cel
Case Connection:	COLLECTOR
Moisture Sensitivity Level (MSL):	1
Polarity or Channel Type:	PNP
Minimum DC Current Gain (hFE):	15
JESD-609 Code:	e3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	20 V
Peak Reflow Temperature (C):	260

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