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| Manufacturer | Diodes Incorporated |
|---|---|
| Manufacturer's Part Number | ZX5T851GQTC |
| Description | NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 6 A; |
| Datasheet | ZX5T851GQTC Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 130 MHz |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 6 A |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Transistor Application: | SWITCHING |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| No. of Terminals: | 4 |
| Maximum Power Dissipation (Abs): | 3 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | COLLECTOR |
| Polarity or Channel Type: | NPN |
| Minimum DC Current Gain (hFE): | 20 |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Maximum Collector-Emitter Voltage: | 60 V |
| Maximum Collector-Base Capacitance: | 31 pF |
| Reference Standard: | AEC-Q101; IATF 16949; MIL-STD-202 |
| Peak Reflow Temperature (C): | 260 |
| Maximum VCEsat: | .26 V |
