Diodes Incorporated - ZX5T951GQTC

ZX5T951GQTC by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number ZX5T951GQTC
Description PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 120 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 5.5 A;
Datasheet ZX5T951GQTC Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 120 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 5.5 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 4
Maximum Power Dissipation (Abs): 3 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Polarity or Channel Type: PNP
Minimum DC Current Gain (hFE): 10
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Maximum Collector-Emitter Voltage: 60 V
Maximum Collector-Base Capacitance: 48 pF
Reference Standard: AEC-Q101; IATF 16949; MIL-STD-202
Peak Reflow Temperature (C): 260
Maximum VCEsat: .25 V
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