ZXT12N20DXTC by Diodes Incorporated | Transistors

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Manufacturer	Diodes Incorporated
Manufacturer's Part Number	ZXT12N20DXTC
Description	NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 112 MHz; Maximum Power Dissipation (Abs): 1.25 W; Maximum Collector Current (IC): 3.5 A;
Datasheet	ZXT12N20DXTC Datasheet

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	112 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	3.5 A
Configuration:	SEPARATE, 2 ELEMENTS
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	8
Maximum Power Dissipation (Abs):	1.25 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	S-PDSO-G8
No. of Elements:	2
Package Shape:	SQUARE
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
JEDEC-95 Code:	MO-187AA
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	40
JESD-609 Code:	e3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	20 V
Peak Reflow Temperature (C):	260

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