Diodes Incorporated - ZXT12P12DXTC

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ZXT12P12DXTC by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number ZXT12P12DXTC
Description PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 85 MHz; Maximum Power Dissipation (Abs): 1.25 W; Maximum Collector Current (IC): 3 A;
Datasheet ZXT12P12DXTC Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 85 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 3 A
Configuration: SEPARATE, 2 ELEMENTS
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 8
Maximum Power Dissipation (Abs): 1.25 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-G8
No. of Elements: 2
Package Shape: SQUARE
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Moisture Sensitivity Level (MSL): 1
JEDEC-95 Code: MO-187AA
Polarity or Channel Type: PNP
Minimum DC Current Gain (hFE): 20
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 12 V
Peak Reflow Temperature (C): 260
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