ZXTDB2M832TC by Diodes Incorporated | Transistors

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Manufacturer	Diodes Incorporated
Manufacturer's Part Number	ZXTDB2M832TC
Description	NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 4.5 A;
Datasheet	ZXTDB2M832TC Datasheet

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	140 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	4.5 A
Configuration:	SEPARATE, 2 ELEMENTS
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Sub-Category:	BIP General Purpose Small Signal
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	10
Maximum Power Dissipation (Abs):	3 W
Terminal Position:	QUAD
Package Style (Meter):	FLATPACK
JESD-30 Code:	R-PQFP-F10
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Maximum Operating Temperature:	150 Cel
Case Connection:	COLLECTOR
Moisture Sensitivity Level (MSL):	1
Polarity or Channel Type:	NPN AND PNP
Minimum DC Current Gain (hFE):	100
JESD-609 Code:	e3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	20 V
Peak Reflow Temperature (C):	260

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