Diodes Incorporated - ZXTDE4M832TC

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ZXTDE4M832TC by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number ZXTDE4M832TC
Description NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 3.5 A;
Datasheet ZXTDE4M832TC Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 160 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 3.5 A
Configuration: SEPARATE, 2 ELEMENTS
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: BIP General Purpose Small Signal
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 10
Maximum Power Dissipation (Abs): 3 W
Terminal Position: QUAD
Package Style (Meter): FLATPACK
JESD-30 Code: R-PQFP-F10
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: NPN AND PNP
Minimum DC Current Gain (hFE): 20
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 80 V
Peak Reflow Temperature (C): 260
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