ZXTN5551FLQ by Diodes Incorporated | Transistors

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Manufacturer	Diodes Incorporated
Manufacturer's Part Number	ZXTN5551FLQ
Description	NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .6 A;
Datasheet	ZXTN5551FLQ Datasheet

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	130 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.6 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Polarity or Channel Type:	NPN
Surface Mount:	YES
Minimum DC Current Gain (hFE):	30
Minimum Operating Temperature:	-55 Cel
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.33 W
Maximum Collector-Emitter Voltage:	160 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Maximum Collector-Base Capacitance:	6 pF
Reference Standard:	AEC-Q101; IATF 16949; MIL-STD-202
Maximum VCEsat:	200 V

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